This specification specifies the detailed requirements for 3Dk104 type NPN silicon low power switching transistors (hereinafter referred to as devices); each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "Semiconductor Discrete Device Information Specification". SJ 20057-1992 Semiconductor Discrete Device 3DK104 Type NPN Silicon Low Power Switching Transistor Detailed Specification SJ20057-1992 Standard Download Decompression Password: www.bzxz.net
This specification specifies the detailed requirements for 3Dk104 type NPN silicon low power switching transistors (hereinafter referred to as devices); each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "Semiconductor Discrete Device Information Specification".

GB 4587-1984 Bipolar Transistor Test Methods
GB 7581-1987 Dimensions of Semiconductor Discrete Devices
GJB 33-1985 General Specification for Discrete Semiconductor Devices
GJB 128-1986 Test Methods for Discrete Semiconductor Devices

1 Scope
People's Republic of China Electronic Industry Military Standard Semiconductor Discrete Devices
3DK104 Type NPN Silicon Low Power Switching Transistor Detailed Specification
Semiconductor discrcte deviceDetail spceation for silicon NPNlow power switching transistor of type 3DK1041.1 Subject Content
SJ20057—92
This specification specifies the detailed requirements for 3DK104 type NPN silicon low power switching transistor (hereinafter referred to as device). Each device provides three levels of product assurance (GP, GT and GCT) in accordance with the provisions of GJB33 "General Specification for Semiconductor Discrete Devices".
1992-11-19 Issued
China Electronics Industry Corporation
1993-05-01 Implementation
1.2 Dimensions
SJ2005792
The dimensions should conform to the A3-02B type in GB7581 "Dimensions of Discrete Semiconductor Devices" and the following provisions, see Figure 1:
Terminal polarity:
1. Emitter
3. Collector
Figure 1 Dimensions
.0.407
A3-02B
1.3 Maximum Ratings
3DK104A
3DK104B
3DK104C
3DK104D
Te-25℃
SJ20057-92
Note: 1) When T>25℃, derate linearly at a rate of 4.0mW/℃. 2) When Tc>25℃, derate linearly at a rate of 15mW/C. 1.4 Main electrical characteristics (T^=25℃)
3DK104A
3DK104B
3DK104C
3DK104D
3DK104A
3DK104B
3DK104C
3DK104D
3DK104A
3DK104B
3DK10 4C
3DK104D
Minimum value
Maximum value
f=30MHz
Veg-10V
le=50mA
Minimum value
Maximum value
Ie=100mA
Ig=10mA
Minimum value
Maximum value
Note: 1) Pulse method (see 4.5.1).
hy(Veg=3V)
c=10mA
Min.
Max.
f=1MHz
Ves=10V
Min.
Max.
Ver(aul
le=300mA
Ig=30mA
Min.
Max.|| tt||le=200mA
Minimum value
Maximum value
le=300mA
Ig-30mA
Minimum value
Maximum value
Vakaut3
le-100mA
Ig=10mA
Minimum value
Maximum value
-65~+200|| tt||le=300mA
Minimum value
Maximum value
lc=300mA
Iai=lz30mA
Minimum value
Maximum value
VhE(nngl)
le300mA
Ig=30mA
Minimum value
Maximum value
Referenced documents|| tt||SJ20057—92
GB4587-84 Test methods for bipolar transistors GB7581—87
7 Dimensions of discrete semiconductor devices
GJB33--85
General specification for discrete semiconductor devices
GJB128-—86
Test methods for discrete semiconductor devices
3 Requirements
3.1 Details Requirements
All requirements shall be in accordance with the provisions of GJB33 and this specification. 3.2 Design, structure and dimensions
The design, structure and dimensions of the device shall be in accordance with the provisions of GJB33 and this specification. 3.2.1 Terminal material and coating
The terminal material shall be Kovar. The terminal surface coating shall be gold-plated, tin-plated or immersion tin. The selection of terminal material and coating requirements or other requirements shall be clearly specified in the contract or order (see Chapter 6). 3.3 Marking
The marking of the device shall be in accordance with the provisions of GJB33.
4 Quality assurance provisions
4.1 Sampling and inspection
Sampling and inspection shall be in accordance with the provisions of GJB33 and this specification. 4.2 Qualification inspection
Qualification inspection shall be in accordance with the provisions of GJB33.
4.3 Screening (GT and GCT grades only)
Screening The selection shall be in accordance with the provisions of GJB33 Table 2 and this specification. The following tests shall be carried out in accordance with this specification Table 1. Devices exceeding the specified limit values ​​shall not be accepted.
(See GJB33 Table 2)
Intermediate parameter test
8. Power aging
Final test
4.3.1 Power aging conditions
TA=25±3℃
Vc=30V (3DK104A. C)
lcwon and hFes
See 4.3.1
Test or experiment
Group A2 in Table 1 of this specification;
4/cn=100% of the initial value or 50nA, whichever is greater;Ahrs=±20% of the initial value
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Group A inspection shall be carried out in accordance with the provisions of GJB33 and Table 1 of this specification. 4.4.2 Group B inspection
Group B inspection shall be carried out in accordance with the provisions of GJB33 and Table 2 of this specification. The final test and variation (A) requirements shall be carried out in accordance with the steps in Table 4 of this specification.
4.4.3 Group C inspection
Group C inspection shall be carried out in accordance with the provisions of GJB33 and Table 3 of this specification. The final test and the change amount (A) requirements shall be carried out according to the steps in Table 4 of this specification.
4.5 Inspection and test methods
Inspection and test methods shall be in accordance with the corresponding tables of this specification and the following provisions:4.5.1 Pulse test
The pulse test shall be in accordance with the provisions of Article 3.3.2.1 of GJB128. Table 1 Group A inspection
Inspection or test
Group A1
Appearance and mechanical inspection
Group A2
Collector-base breakdown voltage
3DK103B
3DK103C
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
3DK103B
3DK103 C
Collector-emitter breakdown voltage
3DK103B
3DK103C
Collector-base cutoff current
3DK103B
3DK103C
Emitter-base cutoff current
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Forward current Transfer ratio
Collector-emitter saturation voltage drop
GJB128
This specification
Appendix A
This specification
Appendix A
GB4587
Emitter-base open circuit
le-10μA
Collector-base open circuit
Ik=10A
Emitter-base open circuit||t t||le=100μA
Emitter-base open
Emitter-base open
Ves=30V
Vc#=50V
Collector-base open
Ve,-1V,lc-ImA
Vcg=1V.le=-10mA
Veg=1V,1c=30mA
Ve=1V,le50mA
Ic-30mAI-3mA
TPD symbol
VIRERO
Limit value
Minimum maximum value
VHROCEO
VsKCEUe
Vegoani
Inspection or test
Emitter-base cut-off current
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Collector-emitter saturation voltage drop
Collector-emitter saturation voltage drop
Base-emitter saturation voltage drop
Base-emitter saturation voltage drop
A3 groupwwW.bzxz.Net
High temperature operation:
Collector-base cut-off current||t t||3DK104AC
3DK104B.D
Low temperature operation:
Forward current transfer ratio
A4 group
Characteristic frequency
Open circuit output capacitance
Saturation turn-on time
3DK104A.B
3DK104C, D
Saturation turn-off time
3DK1 04A.B
3DK104C.D
A5, A6 and A7 grouped
Not applicable
SJ20057--92
Continued Table 1
GB4587
Collector-base open
Vea=5V
Vcg=-3V,le-lmA
Vc-3V,l-10m A
Vc=3Vle=200mA
Pulse method (see 4.5.1)
Veg=3V.le=300mA
Pulse method (see 4.5.1)
le=100mAIg=10mA
le=300mAl:=30mA
Pulse method (see 4.5.1)
le =100mAg=10mA
le=300mA
lg=30mA
Pulse method (see 4.5.1)
TA=+150C
Emitter-base open circuit
Ven-80V
TA--55C
Ve3V.lc-10mA
Vcg-10V.le- 50mA
f=30MHz
Vca-10V.1:=0
lcm300mAl=30mA
le=300mA
ImIg=30mA
LTPD Symbol
VerGan
Limit Value
Minimum Maximum Value
Inspection or Test
B Group 1
Solderability
Durability of marking
Group B2
Thermal shock (temperature cycle)
a. Fine leak detection
b. Coarse leak detection
Final test:
Group B3
Steady-state working life
Final test:
Group B4
Visual inspection inside the cap
(Design Verification）
Bond strength
B5 group
Not applicable
B6 group
High temperature life
(Not working)
Final test:
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Table 2B group inspection
GJB128
See Table 4. Steps 1.3 and 4
Vem=30VP u=700mW
T-25±3C
Device heater or forced air cooling is not allowed
See Table 4, steps 2 and 5
Visual inspection standard is as designed during identification
TA-200℃
See Table 4, steps 2 and 5
One device per batch, 0 failure
20(C0)
C1 grouping
Inspection or Test
Dimensions
Group C2
Thermal shock (glass stress)
Terminal strength
a. Fine leak detection
b. Coarse leak detection
Comprehensive temperature/humidity cycle test
Appearance and mechanical inspection
Final test,
Group C3
Variable frequency perturbation
Constant acceleration||tt ||Final test,
C4 group
Salt gas (when applicable)
C5 group
Not applicable
C6 group
Steady-state working life
Final test:
SJ20057—92
Table 3C group inspection
GJB128
See Figure 1
Test condition A||tt ||Test condition E
See Table 4. Steps 1.3 and 4
See Table 4, Steps 1, 3 and 4
TA-25±3CVch-30V
Pa.=700uw
It is not allowed to add heat sink or force air cooling
See Table 4. Steps 2 and 5
In=10
Limit value
Minimum value Maximum value
Inspection or test
Collector-base cut-off current
3DK104A.C
3DK104B.D
Collector-base cut-off current
3DK104A.C
3DK104B, D
Collector-emitter saturation voltage drop
Forward current transfer ratio
Forward current Transfer ratio
SJ20057—92
Table 4 Final test of Group B and Group C
CB4587
Emitter-base is open
Ven=60V
VeB-80V
Emitter-base is open
Vc#=-60V
Von-80V
Ic=100mA|| tt||1=10mA
Pulse method (see 4.5.1)
VeE-3V
le=200mA
Pulse method (see 4.5.1)
Ver=3V
le200mA
Pulse method (see 4.5.1)
Note: 1) For this test, devices exceeding the limit value of Group A shall not be accepted. 5 Delivery preparation
Packing requirements shall be in accordance with the provisions of GJB33.
6 Notes
Limit value
Minimum value
Initial value
The required terminal materials and coatings shall be specified in the contract or order (see 3.2.1).
A1 Purpose
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Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition of emitter-base open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(nRCEO), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01014.1). Maximum value of the segment
A1 Purpose
SJ20057-92
Appendix A
Collector-emitter breakdown voltage test method (supplement)
The purpose of this test is to determine whether the breakdown voltage of the transistor is greater than the specified minimum limit under specified conditions. A2 Test circuit
The test circuit is shown in Figure A1.
Voltage source
Collector-emitter breakdown voltage test circuit A3 Steps
The current limiting resistor R should be large enough to prevent excessive current from flowing through the transistor and the ammeter. Under the condition that the emitter-base is open circuit, increase the voltage until the specified test current is reached. If the voltage applied at the specified test current is greater than the minimum limit of V(nRCEO), the transistor is qualified. Additional notes:
This specification is proposed by the Science and Technology Quality Bureau of China Electronics Industry Corporation. This specification is under the jurisdiction of China Electronics Technology Standardization Institute. This specification was drafted by China Electronics Technology Standardization Institute and Shijiazhuang Radio Factory No. 2. The main drafters of this specification are: Wang Changfu, Wang Chenglin, and Xie Peilan. Project code: B01014.
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